技术参数

• Package / Case Die
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology GaNFET (Gallium Nitride)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 5A
• Vgs(th) (Max) @ Id 1.4V @ 1.75mA
• Supplier Device Package Die
• Drive Voltage (Max Rds On, Min Rds On) 6V
• Vgs (Max) +7.5V, -12V
• Drain to Source Voltage (Vdss) 650 V
• Gate Charge (Qg) (Max) @ Vgs 2.6 nC @ 6 V
• Input Capacitance (Ciss) (Max) @ Vds 45 pF @ 400 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) Vendor Undefined
• REACH Status Vendor Undefined
• RoHS Status Not applicable