技术参数

• Package / Case 8-PowerVDFN
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology GaNFET (Gallium Nitride)
• Current - Continuous Drain (Id) @ 25°C 8.5A (Tc)
• Rds On (Max) @ Id, Vgs 280mOhm @ 600mA, 12V
• FET Feature Current Sensing
• Vgs(th) (Max) @ Id 4.2V @ 2.75mA
• Supplier Device Package 8-DFN (5x6)
• Drive Voltage (Max Rds On, Min Rds On) 9V, 20V
• Vgs (Max) +20V, -1V
• Drain to Source Voltage (Vdss) 650 V
• Gate Charge (Qg) (Max) @ Vgs 1.4 nC @ 12 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant