技术参数

• Package / Case 4-DIP (0.300", 7.62mm)
• Mounting Type Through Hole
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 600mA (Ta)
• Rds On (Max) @ Id, Vgs 1.6Ohm @ 300mA, 10V
• Supplier Device Package 4-HVMDIP
• Drain to Source Voltage (Vdss) 60 V
• Gate Charge (Qg) (Max) @ Vgs 15 nC @ 15 V
• Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status RoHS non-compliant