- Product Model GA50JT17-247
- Brand GeneSiC Semiconductor
- RoHS No
- Description TRANS SJT 1700V 100A TO247
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1500
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature 175°C (TJ)
- Technology SiC (Silicon Carbide Junction Transistor)
- Current - Continuous Drain (Id) @ 25°C 100A (Tc)
- Rds On (Max) @ Id, Vgs 25mOhm @ 50A
- Power Dissipation (Max) 583W (Tc)
- Supplier Device Package TO-247
- Drain to Source Voltage (Vdss) 1700 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
Related Products
SICFET N-CH 1700V 72A TO247-3
In Stock: 1950
SIC MOSFET N-CH 21A TO247-3
In Stock: 2544
SIC MOSFET N-CH 124A TO247-4
In Stock: 2799
SIC MOSFET N-CH 100A SOT227
In Stock: 1658
SIC MOSFET N-CH 61A TO247-3
In Stock: 2513
TRANS SJT 600V 100A TO258
In Stock: 1500
MOSFET SIC 1700 V 45 MOHM TO-247
In Stock: 1534
