Technical Details

• Package / Case TO-258-3, TO-258AA
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 225°C (TJ)
• Technology SiC (Silicon Carbide Junction Transistor)
• Current - Continuous Drain (Id) @ 25°C 100A (Tc)
• Rds On (Max) @ Id, Vgs 25mOhm @ 50A
• Power Dissipation (Max) 769W (Tc)
• Supplier Device Package TO-258
• Drain to Source Voltage (Vdss) 600 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status RoHS Compliant