- Product Model G080P06T
- Brand Goford Semiconductor
- RoHS No
- Description MOSFET P-CH 60V 195A TO-220
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 11500
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 195A (Tc)
- Rds On (Max) @ Id, Vgs 7.5mOhm @ 20A, 10V
- Power Dissipation (Max) 294W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-220
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status Vendor Undefined
- RoHS Status RoHS non-compliant
Related Products
MOSFET N-CH 60V 223A TO-220
In Stock: 1556
MOSFET P-CH 40V 222A TO-220
In Stock: 1605
P-60V,-195A,RD(MAX)<7.5M@-10V,VT
In Stock: 1630
MOSFET P-CH 60V 195A TO-220
In Stock: 11500
P-60V,RD(MAX)<18M@-10V,VTH-2.0V~
In Stock: 1623
MOSFET P-CH 60V 65A TO-220
In Stock: 11500
MOSFET, P-CH,-60V,-160A,RD(MAX)<
In Stock: 1500
MOSFET P-CH 55V 74A TO220AB
In Stock: 51290
MOSFET N-CH 75V 195A TO220AB
In Stock: 7302
AUTOMOTIVE P-CHANNEL 40 V (D-S)
In Stock: 3102
