- Product Model BSM450D12P4G102
- Brand ROHM Semiconductor
- RoHS No
- Description SIC 2N-CH 1200V 447A MODULE
- Categories FET, MOSFET Arrays
-
PDF
- In Stock 1504
Technical Details
- Package / Case Module
- Mounting Type Chassis Mount
- Configuration 2 N-Channel
- Operating Temperature 175°C (TJ)
- Technology Silicon Carbide (SiC)
- Power - Max 1.45kW (Tc)
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C 447A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 44000pF @ 10V
- Vgs(th) (Max) @ Id 4.8V @ 218.4mA
- Supplier Device Package Module
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
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