• In Stock 1851

Technical Details

  • Package / Case Module
  • Mounting Type Chassis Mount
  • Configuration 2 N-Channel (Half Bridge)
  • Operating Temperature -40°C ~ 175°C (TJ)
  • Technology Silicon Carbide (SiC)
  • Power - Max 850W
  • Drain to Source Voltage (Vdss) 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C 450A
  • Input Capacitance (Ciss) (Max) @ Vds 38000pF @ 800V
  • Rds On (Max) @ Id, Vgs 3.7mOhm @ 450A, 15V
  • Gate Charge (Qg) (Max) @ Vgs 1330nC @ 15V
  • Vgs(th) (Max) @ Id 3.6V @ 132mA
  • Supplier Device Package Module
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)

Related Products


SIC 2N-CH 1200V 300A MODULE

In Stock: 1526

MOSFET 2 N-CH 1200V MODULE

In Stock: 1508

SIC 2N-CH 1200V 450A

In Stock: 1500

SIC 2N-CH 1200V 1015A MODULE

In Stock: 1512

MOSFET 6N-CH 1200V 29.5A MODULE

In Stock: 1500

SIC 2N-CH 1200V 450A

In Stock: 1500

SIC 4N-CH 1200V AG-EASY3B

In Stock: 1509

TRANS PNP 65V 0.1A SOT23-3

In Stock: 43527

Top