- Product Model NTHL022N120M3S
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description SILICON CARBIDE (SIC) MOSFET ELI
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1786
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 68A (Tc)
- Rds On (Max) @ Id, Vgs 30mOhm @ 40A, 18V
- Power Dissipation (Max) 352W (Tc)
- Vgs(th) (Max) @ Id 4.4V @ 20mA
- Supplier Device Package TO-247-3
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +22V, -10V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 139 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 3130 pF @ 800 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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