- Product Model NTHL020N120SC1
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description SICFET N-CH 1200V 103A TO247-3
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1903
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 103A (Tc)
- Rds On (Max) @ Id, Vgs 28mOhm @ 60A, 20V
- Power Dissipation (Max) 535W (Tc)
- Vgs(th) (Max) @ Id 4.3V @ 20mA
- Supplier Device Package TO-247-3
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Vgs (Max) +25V, -15V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 203 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 2890 pF @ 800 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
SICFET N-CH 1200V 102A TO247
In Stock: 1813
SICFET N-CH 1200V 58A TO247-4
In Stock: 2375
SICFET N-CH 1200V 29A TO247-4
In Stock: 1927
SILICON CARBIDE (SIC) MOSFET - 1
In Stock: 1842
SICFET N-CH 1200V 60A TO247-3
In Stock: 1933
SICFET N-CH 1200V 17A TO247-3
In Stock: 1835
SICFET N-CH 1200V 102A TO247
In Stock: 2466
SICFET N-CH 1200V 17.3A TO247
In Stock: 1913
SICFET N-CH 1200V 103A TO247-3
In Stock: 1850
