- Product Model G33N03S
- Brand Goford Semiconductor
- RoHS Yes
- Description N30V,RD(MAX)<12M@10V,RD(MAX)<13M
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 5330
Technical Details
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 13A (Tc)
- Rds On (Max) @ Id, Vgs 12mOhm @ 8A, 10V
- Power Dissipation (Max) 2.5W (Tc)
- Vgs(th) (Max) @ Id 1.1V @ 250µA
- Supplier Device Package 8-SOP
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 13 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds 1550 pF @ 15 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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