- Product Model PSMN8R5-100ESQ
- Brand NXP Semiconductors
- RoHS Yes
- Description POWER FIELD-EFFECT TRANSISTOR, 1
- Categories Single FETs, MOSFETs
- In Stock 975
Technical Details
- Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 100A (Tj)
- Rds On (Max) @ Id, Vgs 8.5mOhm @ 25A, 10V
- Power Dissipation (Max) 263W (Tc)
- Vgs(th) (Max) @ Id 4V @ 1mA
- Supplier Device Package I2PAK
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 111 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 5512 pF @ 50 V
- ECCN EAR99
- HTSUS 0000.00.0000
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


