技术参数

• Package / Case SOT-223-8
• Mounting Type Surface Mount
• Configuration 4 N-Channel (Full Bridge)
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.6W
• Drain to Source Voltage (Vdss) 60V
• Current - Continuous Drain (Id) @ 25°C 1.4A
• Input Capacitance (Ciss) (Max) @ Vds 166pF @ 40V
• Rds On (Max) @ Id, Vgs 300mOhm @ 1.8A, 10V
• Gate Charge (Qg) (Max) @ Vgs 3.2nC @ 10V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 3V @ 250µA
• Supplier Device Package SM8
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Affected
• RoHS Status ROHS3 Compliant