技术参数

• Package / Case Die
• Mounting Type Surface Mount
• Transistor Type NPN
• Operating Temperature -65°C ~ 150°C (TJ)
• Power - Max 350mW
• Voltage - Collector Emitter Breakdown (Max) 25V
• DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA, 10V
• Frequency - Transition 650MHz
• Supplier Device Package Die
• ECCN EAR99
• HTSUS 8541.29.0040
• Moisture Sensitivity Level (MSL) 1 (Unlimited)