技术参数

• Package / Case TO-261-4, TO-261AA
• Mounting Type Surface Mount
• Transistor Type NPN
• Operating Temperature -65°C ~ 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 500mV @ 4mA, 50mA
• Current - Collector Cutoff (Max) 20nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA, 10V
• Frequency - Transition 70MHz
• Supplier Device Package SOT-223 (TO-261)
• Current - Collector (Ic) (Max) 100 mA
• Voltage - Collector Emitter Breakdown (Max) 350 V
• Power - Max 800 mW
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected