技术参数

• Package / Case 8-PowerWDFN
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual) Common Source
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 2.1W (Ta), 29W (Tc)
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 28A (Ta), 95A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 5035pF @ 15V
• Rds On (Max) @ Id, Vgs 2.12mOhm @ 28A, 10V
• Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
• Vgs(th) (Max) @ Id 3V @ 250µA
• Supplier Device Package 8-PQFN (3.3x5)
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected