技术参数

• Package / Case 4-XFBGA
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual) Common Drain
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.6W
• Drain to Source Voltage (Vdss) 24V
• Current - Continuous Drain (Id) @ 25°C 6A (Ta)
• Rds On (Max) @ Id, Vgs 45mOhm @ 3A, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 7nC @ 4.5V
• FET Feature Logic Level Gate, 2.5V Drive
• Vgs(th) (Max) @ Id 1.3V @ 1mA
• Supplier Device Package EFCP1313-4CC-037
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) Not Applicable
• REACH Status REACH Unaffected