技术参数

• Package / Case SOT-563, SOT-666
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual)
• Operating Temperature 150°C
• Technology MOSFET (Metal Oxide)
• Power - Max 250mW
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 250mA (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 36pF @ 10V
• Rds On (Max) @ Id, Vgs 1.1Ohm @ 150mA, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 0.34nC @ 4.5V
• FET Feature Logic Level Gate, 1.2V Drive
• Vgs(th) (Max) @ Id 1V @ 100µA
• Supplier Device Package ES6
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant