技术参数

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual)
• Operating Temperature 150°C
• Technology MOSFET (Metal Oxide)
• Power - Max 1.12W
• Drain to Source Voltage (Vdss) 60V
• Current - Continuous Drain (Id) @ 25°C 5A (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 640pF @ 10V
• Rds On (Max) @ Id, Vgs 56mOhm @ 2.5A, 10V
• Gate Charge (Qg) (Max) @ Vgs 13.4nC @ 10V
• Supplier Device Package 8-SOP
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant