技术参数

• Package / Case Module
• Mounting Type Chassis Mount
• Configuration 4 N-Channel
• Operating Temperature -40°C ~ 175°C (TJ)
• Technology Silicon Carbide (SiC)
• Power - Max 750W
• Drain to Source Voltage (Vdss) 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 147A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 5576pF @ 1000V
• Rds On (Max) @ Id, Vgs 17mOhm @ 100A, 20V
• Gate Charge (Qg) (Max) @ Vgs 332nC @ 5V
• Vgs(th) (Max) @ Id 4V @ 30mA
• Supplier Device Package SP3
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant