技术参数

• Package / Case TO-213AA, TO-66-2
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature -55°C ~ 200°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 2.5V @ 25mA, 250mA
• Current - Collector Cutoff (Max) 100µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 250mA, 10V
• Supplier Device Package TO-66 (TO-213AA)
• Current - Collector (Ic) (Max) 1 A
• Voltage - Collector Emitter Breakdown (Max) 300 V
• Power - Max 20 W
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status REACH Unaffected