技术参数

• Package / Case M150
• Mounting Type Surface Mount
• Transistor Type NPN
• Operating Temperature 200°C
• Gain 17dB
• Power - Max 180W
• Current - Collector (Ic) (Max) 30A
• Voltage - Collector Emitter Breakdown (Max) 15V
• DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 14mA, 10V
• Frequency - Transition 5.5GHz
• Noise Figure (dB Typ @ f) 2.5dB @ 1GHz
• Supplier Device Package M150
• ECCN OBSOLETE
• HTSUS 0000.00.0000
• Moisture Sensitivity Level (MSL) 1 (Unlimited)