技术参数

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 3.3W
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 7.3A (Tc), 5.3A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 535pF @ 15V, 528pF @ 15V
• Rds On (Max) @ Id, Vgs 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
• Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 10V, 10.2nC @ 10V
• Vgs(th) (Max) @ Id 2.5V @ 250µA
• Supplier Device Package 8-SOIC
• Grade Automotive
• Qualification AEC-Q101
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)