技术参数

• Package / Case TO-206AF, TO-72-4 Metal Can
• Mounting Type Through Hole
• Transistor Type PNP
• Operating Temperature -65°C ~ 200°C (TJ)
• Gain 25dB
• Power - Max 300mW
• Current - Collector (Ic) (Max) 30mA
• Voltage - Collector Emitter Breakdown (Max) 25V
• DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 2mA, 10V
• Frequency - Transition 2.5GHz
• Supplier Device Package TO-72
• ECCN EAR99
• HTSUS 8541.21.0075
• RoHS Status ROHS3 Compliant