- 产品型号 NTD18N06-001
- 品牌 Sanyo Semiconductor/onsemi
- RoHS No
- 描述 MOSFET N-CH 60V 18A IPAK
- 分类 单 FET、MOSFET
-
PDF
- 库存 0
技术参数
- Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 18A (Ta)
- Rds On (Max) @ Id, Vgs 60mOhm @ 9A, 10V
- Power Dissipation (Max) 2.1W (Ta), 55W (Tj)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package IPAK
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 710 pF @ 25 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status RoHS non-compliant


