技术参数

• Package / Case TO-220-3 Full Pack
• Mounting Type Through Hole
• Operating Temperature 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 68A (Tc)
• Rds On (Max) @ Id, Vgs 7.2mOhm @ 15A, 4.5V
• Power Dissipation (Max) 36W (Tc)
• Vgs(th) (Max) @ Id 2.5V @ 500µA
• Supplier Device Package TO-220SIS
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 60 V
• Gate Charge (Qg) (Max) @ Vgs 48.2 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 3280 pF @ 30 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) Not Applicable
• RoHS Status ROHS3 Compliant