技术参数

• Package / Case Module
• Mounting Type Through Hole
• Configuration 2 N-Channel (Half Bridge)
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology GaNFET (Gallium Nitride)
• Power - Max 470W
• Drain to Source Voltage (Vdss) 600V
• Current - Continuous Drain (Id) @ 25°C 70A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 2260pF @ 100V
• Rds On (Max) @ Id, Vgs 34mOhm @ 30A, 8V
• Gate Charge (Qg) (Max) @ Vgs 28nC @ 8V
• Supplier Device Package Module
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)