技术参数

• Package / Case 3-XDFN Exposed Pad
• Mounting Type Surface Mount
• Transistor Type PNP - Pre-Biased
• Vce Saturation (Max) @ Ib, Ic 100mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max) 500nA
• DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 5V
• Supplier Device Package DFN1010D-3
• Grade Automotive
• Current - Collector (Ic) (Max) 500 mA
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Power - Max 325 mW
• Frequency - Transition 150 MHz
• Resistor - Base (R1) 1 kOhms
• Resistor - Emitter Base (R2) 10 kOhms
• Qualification AEC-Q101
• ECCN EAR99
• HTSUS 8541.21.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant