- 产品型号 SSM6N61NU,LF
- 品牌 Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- 描述 MOSFET 2N-CH 20V 4A 6UDFNB
- 分类 FET、MOSFET 阵列
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技术参数
- Package / Case 6-WDFN Exposed Pad
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Dual)
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 2W
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 4A
- Input Capacitance (Ciss) (Max) @ Vds 410pF @ 10V
- Rds On (Max) @ Id, Vgs 33mOhm @ 4A, 4.5V
- Gate Charge (Qg) (Max) @ Vgs 3.6nC @ 4.5V
- FET Feature Logic Level Gate, 1.5V Drive
- Vgs(th) (Max) @ Id 1V @ 1mA
- Supplier Device Package 6-UDFNB (2x2)
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


