技术参数

• Package / Case SOT-563, SOT-666
• Mounting Type Surface Mount
• Configuration 2 P-Channel (Dual)
• Operating Temperature -65°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 350mW
• Drain to Source Voltage (Vdss) 50V
• Current - Continuous Drain (Id) @ 25°C 280mA
• Input Capacitance (Ciss) (Max) @ Vds 70pF @ 25V
• Rds On (Max) @ Id, Vgs 2.5Ohm @ 500mA, 10V
• Gate Charge (Qg) (Max) @ Vgs 0.72nC @ 4.5V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 2.5V @ 250µA
• Supplier Device Package SOT-563
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant