技术参数

• Package / Case 8-PowerVDFN
• Mounting Type Surface Mount
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 36A (Tc)
• Rds On (Max) @ Id, Vgs 4.7mOhm @ 18A, 4.5V
• Power Dissipation (Max) 42W (Tc)
• Vgs(th) (Max) @ Id 1.2V @ 1mA
• Supplier Device Package 8-TSON Advance (3.1x3.1)
• Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
• Vgs (Max) ±12V
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 65 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status RoHS Compliant