技术参数

• Package / Case SOT-23-6 Thin, TSOT-23-6
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual) Common Drain
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 900mW
• Drain to Source Voltage (Vdss) 24V
• Current - Continuous Drain (Id) @ 25°C 6A
• Rds On (Max) @ Id, Vgs 20mOhm @ 3A, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V
• FET Feature Logic Level Gate, 2.5V Drive
• Supplier Device Package 6-CPH
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant