技术参数

• Package / Case SOT-23-6 Thin, TSOT-23-6
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 800mW
• Drain to Source Voltage (Vdss) 30V, 20V
• Current - Continuous Drain (Id) @ 25°C 400mA, 1.5A
• Input Capacitance (Ciss) (Max) @ Vds 7pF @ 10V
• Rds On (Max) @ Id, Vgs 3.7Ohm @ 80mA, 4V
• Gate Charge (Qg) (Max) @ Vgs 1.58nC @ 10V
• FET Feature Logic Level Gate
• Supplier Device Package 6-CPH
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected