技术参数

• Package / Case 8-PowerWDFN
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Half Bridge)
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 2.2W
• Drain to Source Voltage (Vdss) 100V
• Current - Continuous Drain (Id) @ 25°C 10.4A
• Input Capacitance (Ciss) (Max) @ Vds 2230pF @ 50V
• Rds On (Max) @ Id, Vgs 9.9mOhm @ 10.4A, 10V
• Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
• Vgs(th) (Max) @ Id 4V @ 250µA
• Supplier Device Package Power56
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant