- 产品型号 VT6M1T2CR
- 品牌 ROHM Semiconductor
- RoHS Yes
- 描述 MOSFET N/P-CH 20V 0.1A VMT6
- 分类 FET、MOSFET 阵列
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技术参数
- Package / Case 6-SMD, Flat Leads
- Mounting Type Surface Mount
- Configuration N and P-Channel
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 120mW
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 100mA
- Input Capacitance (Ciss) (Max) @ Vds 7.1pF @ 10V
- Rds On (Max) @ Id, Vgs 3.5Ohm @ 100mA, 4.5V
- FET Feature Logic Level Gate, 1.2V Drive
- Vgs(th) (Max) @ Id 1V @ 100µA
- Supplier Device Package VMT6
- ECCN EAR99
- HTSUS 8541.21.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


