技术参数

• Package / Case D-3 Module
• Mounting Type Chassis Mount
• Configuration 2 N-Channel (Half Bridge)
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology Silicon Carbide (SiC)
• Power - Max 1100W
• Drain to Source Voltage (Vdss) 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 250A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 9500pF @ 1000V
• Rds On (Max) @ Id, Vgs 10mOhm @ 200A, 20V
• Gate Charge (Qg) (Max) @ Vgs 490nC @ 20V
• Vgs(th) (Max) @ Id 2.2V @ 10mA (Typ)
• Supplier Device Package D3
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant