- 产品型号 RN1907FE,LF(CT
- 品牌 Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- 描述 TRANS 2NPN PREBIAS 0.1W ES6
- 分类 双极晶体管阵列，预偏置
- 库存 1000
技术参数
- Package / Case SOT-563, SOT-666
- Mounting Type Surface Mount
- Transistor Type 2 NPN - Pre-Biased (Dual)
- Power - Max 100mW
- Current - Collector (Ic) (Max) 100mA
- Voltage - Collector Emitter Breakdown (Max) 50V
- Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
- Frequency - Transition 250MHz
- Resistor - Base (R1) 10kOhms
- Resistor - Emitter Base (R2) 47kOhms
- Supplier Device Package ES6
- ECCN EAR99
- HTSUS 8541.21.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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