技术参数

• Package / Case 16-DIP (0.300", 7.62mm)
• Mounting Type Through Hole
• Configuration 4 N-Channel, Matched Pair
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 10.6V
• Current - Continuous Drain (Id) @ 25°C 80mA
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 20mV @ 10µA
• Supplier Device Package 16-PDIP
• California Prop 65 California Prop 65 Information
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant