技术参数

• Package / Case M115
• Mounting Type Chassis Mount
• Transistor Type NPN
• Operating Temperature 200°C (TJ)
• Gain 10.8dB
• Power - Max 600mW
• Current - Collector (Ic) (Max) 300mA
• Voltage - Collector Emitter Breakdown (Max) 20V
• DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 100mA, 5V
• Frequency - Transition 1.09GHz
• Supplier Device Package M115
• ECCN EAR99
• HTSUS 8541.21.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected