技术参数

• Package / Case M214
• Mounting Type Chassis Mount
• Transistor Type NPN
• Operating Temperature 250°C (TJ)
• Gain 7.8dB
• Power - Max 75W
• Current - Collector (Ic) (Max) 3.5A
• Voltage - Collector Emitter Breakdown (Max) 55V
• DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A, 5V
• Frequency - Transition 960MHz ~ 1.215GHz
• Supplier Device Package M214
• ECCN EAR99
• HTSUS 8541.29.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected