技术参数

• Package / Case 19-PowerDIP Module
• Mounting Type Through Hole
• Configuration 6 N-Channel (3-Phase Bridge)
• Operating Temperature 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 115W
• Drain to Source Voltage (Vdss) 40V
• Current - Continuous Drain (Id) @ 25°C 150A
• Rds On (Max) @ Id, Vgs 1.66mOhm @ 80A, 10V
• FET Feature Logic Level Gate
• Supplier Device Package Module
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) Not Applicable
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant