技术参数

• Package / Case 3-XFDFN
• Mounting Type Surface Mount
• Transistor Type PNP - Pre-Biased
• Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA
• Current - Collector Cutoff (Max) 1µA
• DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 5V
• Supplier Device Package DFN1006B-3
• Grade Automotive
• Current - Collector (Ic) (Max) 20 mA
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Power - Max 250 mW
• Frequency - Transition 180 MHz
• Resistor - Base (R1) 100 kOhms
• Resistor - Emitter Base (R2) 100 kOhms
• Qualification AEC-Q100
• ECCN EAR99
• HTSUS 8541.21.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant