技术参数

• Package / Case TO-3PL
• Mounting Type Through Hole
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 100A (Tc)
• Rds On (Max) @ Id, Vgs 18mOhm @ 50A, 10V
• Power Dissipation (Max) 797W (Tc)
• Vgs(th) (Max) @ Id 3.7V @ 5mA
• Supplier Device Package TO-3P(L)
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±30V
• Drain to Source Voltage (Vdss) 600 V
• Gate Charge (Qg) (Max) @ Vgs 360 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 15000 pF @ 30 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status ROHS3 Compliant