技术参数

• Package / Case SOT-563, SOT-666
• Mounting Type Surface Mount
• Configuration 2 P-Channel (Dual)
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 330mW
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 550mA
• Input Capacitance (Ciss) (Max) @ Vds 87pF @ 10V
• Rds On (Max) @ Id, Vgs 850mOhm @ 400mA, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 1.14nC @ 4.5V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 1.3V @ 250µA
• Supplier Device Package SOT-666
• Grade Automotive
• Qualification AEC-Q101
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant