技术参数

• Package / Case SOT-23-6 Thin, TSOT-23-6
• Mounting Type Surface Mount
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 4.5A (Ta)
• Rds On (Max) @ Id, Vgs 56mOhm @ 2.2A, 10V
• Power Dissipation (Max) 700mW (Ta)
• Vgs(th) (Max) @ Id 2V @ 100µA
• Supplier Device Package VS-6 (2.9x2.8)
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status RoHS Compliant