技术参数

• Package / Case 8-SMD, Flat Lead
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.2W
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 4A, 3A
• Input Capacitance (Ciss) (Max) @ Vds 345pF @ 10V
• Rds On (Max) @ Id, Vgs 45mOhm @ 4A, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 4.5V
• FET Feature Logic Level Gate
• Supplier Device Package 8-EMH
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected