技术参数

• Package / Case 18-PowerVQFN
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual)
• Technology MOSFET (Metal Oxide)
• Power - Max 2.4W, 3.4W
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 13A, 28A
• Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 15V
• Rds On (Max) @ Id, Vgs 8.6mOhm @ 12A, 10V
• Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 2.35V @ 25µA
• Supplier Device Package PQFN (5x6)
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 2 (1 Year)
• REACH Status REACH Unaffected