- 产品型号 SSM3K35MFV(TPL3)
- 品牌 Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- 描述 MOSFET N-CH 20V 180MA VESM
- 分类 单 FET、MOSFET
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- 库存 0
技术参数
- Package / Case SOT-723
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 180mA (Ta)
- Rds On (Max) @ Id, Vgs 3Ohm @ 50mA, 4V
- Power Dissipation (Max) 150mW (Ta)
- Vgs(th) (Max) @ Id 1V @ 1mA
- Supplier Device Package VESM
- Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4V
- Vgs (Max) ±10V
- Drain to Source Voltage (Vdss) 20 V
- Input Capacitance (Ciss) (Max) @ Vds 9.5 pF @ 3 V
- ECCN EAR99
- HTSUS 8541.21.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status RoHS Compliant


