技术参数

• Package / Case SOT-563, SOT-666
• Mounting Type Surface Mount
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 1.8A (Ta)
• Rds On (Max) @ Id, Vgs 136mOhm @ 1A, 2.5V
• Power Dissipation (Max) 500mW (Ta)
• Vgs(th) (Max) @ Id 1V @ 1mA
• Supplier Device Package ES6
• Drive Voltage (Max Rds On, Min Rds On) 1.5V, 2.5V
• Vgs (Max) ±8V
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 10.6 nC @ 4 V
• Input Capacitance (Ciss) (Max) @ Vds 568 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)