技术参数

• Package / Case 4-SMD, No Lead
• Mounting Type Surface Mount
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
• Rds On (Max) @ Id, Vgs 205mOhm @ 250mA, 4V
• Power Dissipation (Max) 400mW (Ta)
• Vgs(th) (Max) @ Id 1.1V @ 1mA
• Supplier Device Package CST4 (1.2x0.8)
• Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V
• Vgs (Max) ±12V
• Drain to Source Voltage (Vdss) 20 V
• Input Capacitance (Ciss) (Max) @ Vds 174 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)